digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n5060-2N5064 sensitive gate silicon controlled rectifiers available non-rohs (standard) or rohs compliant (add pbf suffix). available as ?hr? (high reliability) screened per mil-prf- 19500, jantx level. add ?hr? suffix to base part number. maximum ratings rating symbol value unit peak repetitive off-state voltage (1) (t j = -40 to +110c, sine wave, 50 to 60 hz, gate open) 2n5060 2n5061 2n5062 2N5064 v drm v rrm 30 60 100 200 v on-state current rms (180 conduction angles, t c = 80c) i t(rms) 0.8 a average on-state current (180 conduction angles) (t c = 67c) (t c = 102c) i t(av) 0.51 0.255 a peak non-repetitive surge current (t a = 25c) (1/2 cycle, sine wave, 60hz) i tsm 10 a circuit fusing considerations (t = 8.3 ms) i 2 t 0.4 a 2 s average on-state current (180 conduction angles) (t c = 67c) (t c = 102c) i t(av) 0.51 0.255 a forward peak gate power (pulse width 1.0sec; t a = 25c) p gm 0.1 w forward average gate power (t a = 25c, t = 8.3ms) p g(av) 0.01 w forward peak gate current (pulse width 1.0sec; t a = 25c) i gm 1.0 a reverse peak gate voltage (pulse width 1.0sec; t a = 25c) v rgm 5.0 v operating junction temperature range t j -40 to +110 c storage temperature range t stg -40 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual st ress limit values (not normal op erating conditions) and are not valid simultaneously. if these limits are exceeded, device f unctional operation is not implied, damage may occur and reliabili ty may be affected. 1. v drm and v rrm for all types can be applied on a continuous basis. ratings apply for zero or negative gate voltage; however, positive gate v oltage shall not be applied concurrent with negative potential on the anode. blocking voltages shall not be tested with a constant current source such that the voltage ra tings of the devices are exceeded. thermal characteristics characteristics symbol max unit thermal resistance, junction to case r jc 75 c/w thermal resistance, junction to ambient r ja 200 c/w lead solder temperature (lead length 1/16? from case, 10 s max.) - 230 c electrical characteristics (t c = 25c unless otherwise noted) characteristics symbol min typ max unit off characteristics peak repetitive forward or reverse blocking current (2) (v ak = rated v drm or v rrm ) t c = 25c t c = 110c i drm , i rrm - - - - 10 50 a on characteristics peak forward on-state voltage (3) (i tm = 1.2 a peak @ t a = 25c) v tm - - 1.7 v gate trigger current (continuous dc) (4) (v ak = 7.0 vdc, r l = 100 ) t c = 25c t c = -40c i gt - - - - 200 350 a gate trigger voltage (continuous dc) (4) (v ak = 7.0 vdc, r l = 100 ) t c = 25c t c = -40c v gt - - - - 0.8 1.2 v gate non-trigger voltage (v ak = rated v drm , r l = 100 ) t c = 110c v gd 0.1 - - v sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n5060-2N5064 sensitive gate silicon controlled rectifiers characteristics symbol min typ max unit on characteristics holding current (4) (v ak = 7.0 vdc, initiating current = 20ma) t c = 25c t c = -40c i h - - - - 5.0 10 ma turn-on time delay time rise time (i gt = 1.0 ma, v d = rated v drm , forward current = 1.0 a, di/dt = 6.0 a/s) t d t r - - 3.0 0.2 - - s turn-off time (forward current = 1.0 a pulse, pulse width = 50s, 0.1% duty cycle, di/dt = 6.0 a/s, dv/dt = 20 v/s, i gt = 1 ma) 2n5060, 2n5061 2n5062, 2N5064 t q - - 10 30 - - s dynamic characteristics critical rate of rise of off-state voltage (rated v drm , exponential) dv/dt - 30 - v/s 2. r gk = 1000 is included in measurement. 3. forward current applied for 1 ms maximum duration, duty cycle 1%. 4. r gk current is not included in measurement. mechanical characteristics case to-92 marking alpha-numeric pin out see below to-92 inches millimeters min max min max a 0.175 0.205 4.450 5.200 b 0.170 0.210 4.320 5.330 c 0.125 0.165 3.180 4.190 d 0.016 0.022 0.410 0.550 f 0.016 0.019 0.410 0.480 g 0.045 0.055 1.150 1.390 h 0.095 0.105 2.420 2.660 j 0.015 0.020 0.390 0.500 k 0.500 - 12.700 - l 0.250 - 6.350 - n 0.080 0.105 2.040 2.660 p - 0.100 - 2.540 r 0.115 - 2.930 - v 0.135 - 3.430 - sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n5060-2N5064 sensitive gate silicon controlled rectifiers sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
digitron semiconductors 144 market street kenilworth nj 07033 usa phone +1.908.245-7200 2n5060-2N5064 sensitive gate silicon controlled rectifiers sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com rev. 20130116
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